Middle of-line borderless contact structure and method of forming
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, David V. Horak, Edward J. Nowak
Life of this patent
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Abstract
Various embodiments disclosed include semiconductor structures and methods of forming such structures. In one embodiment, a method includes: providing a semiconductor structure including: a substrate; at least one gate structure overlying the substrate; and an interlayer dielectric overlying the substrate and the at least one gate structure; removing the ILD overlying the substrate to expose the substrate; forming a silicide layer over the substrate; forming a conductor over the silicide layer and the at least one gate structure; forming an opening in the conductor to expose a portion of a gate region of the at least one gate structure; and forming a dielectric in the opening in the conductor.
Claims9
A method comprising:
- providing a semiconductor structure including:
- a substrate;
- at least one gate structure overlying the substrate, the at least one gate structure having:
- a gate region contacting the substrate;
- a set of spacers adjacent to the gate region and contacting the substrate;
- a replacement metal gate (RMG) cap overlying the gate region between the set of spacers;
- and
- an interlayer dielectric (ILD) overlying the substrate and substantially surrounding the at least one gate structure;
- removing the ILD overlying the substrate to expose the substrate;
- forming a silicide layer over the substrate;
- forming a conductor over the silicide layer and the at least one gate structure;
- forming an opening in the conductor to expose a portion of the gate region;
- and
- forming a dielectric in the opening in the conductor.
Dependencies are inferred from the claim text.