Fabrication of nickel free silicide for semiconductor contact metallization

A method comprising:

• fabricating a semiconductor device, the fabricating comprising;
• providing a semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor comprising an active region, the active region comprising two adjacent gate structures thereon;
• selectively removing a portion of a dielectric layer between two adjacent gate structures to form a contact opening, wherein the contact opening is defined by a bottom and sidewalls, and the contact opening further residing over the active region in each of the n-type transistor and the p-type transistor;
• selectively providing a bilayer liner within the contact opening residing over the active region in the n-type transistor and providing a monolayer liner within the contact opening residing over the active region in the p-type transistor;
• and
• filling the contact opening with contact material.