Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby

A method comprising:

• providing a first substrate comprising:
• a first region, wherein the first region comprises a first semiconductor layer of a first group IV semiconductor material, and
• a second region;
• providing a second substrate comprising a second semiconductor layer of a III-V semiconductor material and an insulating layer overlaying the second semiconductor layer;
• direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer;
• selectively removing the second semiconductor layer and the insulating layer above the first region, thereby exposing the first semiconductor layer in the first region;
• growing a third semiconductor layer on the exposed first semiconductor layer, wherein the third semiconductor layer comprises a second group IV semiconductor material that is different from the first group IV semiconductor material;
• forming on the third semiconductor layer a first gate stack corresponding to a first metal-oxide-semiconductor field effect transistor (MOSFET);
• and
• forming on the second semiconductor layer a second gate stack corresponding to a second MOSFET.