Semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorZvi Or-Bach
Life of this patent
Estimating the term…
Abstract
A semiconductor device, including: a first layer including monocrystalline material and first transistors, the first transistors overlaid by a first isolation layer; a second layer including second transistors and overlaying the first isolation layer, the second transistors including a monocrystalline material; at least one contact to the second transistors, where the at least one contact is aligned to the first transistors with less than about 40 nm alignment error, a first set of external connections underlying the first layer to connect the device to external devices; and a second set of external connections overlying the second layer to connect the device to external devices.
Claims20
A semiconductor device, comprising:
- a first layer comprising monocrystalline material and first transistors, said first transistors overlaid by a first isolation layer;
- a second layer comprising second transistors and overlaying said first isolation layer, said second transistors comprising a monocrystalline material;
- at least one contact to said second transistors,
- wherein said at least one contact is aligned to said first transistors with less than about 40 nm alignment error,
- a first set of external connections underlying said first layer to connect said device to external devices;
- a second set of external connections overlying said second layer to connect said device to external devices;
- and
- an interconnection layer in-between said first layer and said second layer,
- wherein said interconnection layer comprises copper or aluminum.
A semiconductor device, comprising:
- a first layer comprising monocrystalline material and first transistors, said first transistors overlaid by a first isolation layer;
- a second layer comprising second transistors and overlaying said first isolation layer, said second transistors comprising a monocrystalline material;
- at least one contact to said second transistors,
- wherein said at least one contact is aligned to said first transistors with less than about 40 nm alignment error,
- a first set of external connections underlying said first layer to connect said device to external devices;
- and
- a second set of external connections overlying said second layer to connect said device to external devices,
- wherein said second layer comprises a node for wireless connection to external devices.
A semiconductor device, comprising:
- a first layer comprising monocrystalline material and first transistors, said first transistors overlaid by a first isolation layer;
- a second layer comprising second transistors and overlaying said first isolation layer, said second transistors comprising a monocrystalline material;
- at least one contact to said second transistors,
- wherein said at least one contact is aligned to said first transistors with less than about 40 nm alignment error,
- a first set of external connections underlying said first layer to connect said device to external devices;
- and
- a second set of external connections overlying said second layer to connect said device to external devices.
Dependencies are inferred from the claim text.