Capping coating for 3D integration applications

A method for wafer-level layer transfer comprising the steps of:

• providing a layer to be transferred on a semiconductor substrate;
• forming a first layer of a capping coating comprising a nitride-containing material on said layer to be transferred, wherein said first layer provides adhesion and protection from oxidation;
• forming a second layer of the capping coating comprised of an amino silane material on said first layer, wherein said second layer provides additional protection and adhesion to a carrier assembly and wherein the amino silane material is represented by the formula:
• wherein:
• each of R1, R2, R3 is independently hydrogen, C1-C6 alkyl, C1-C6 acyl, C2-C6 allyl, C2-C6 alkenyl, or C2-C6 alkynyl,
• R4 is C1-C6 alkyl, phenyl, or benzyl, and
• each of R5 and R6 is independently C1-C6 alkyl, C1-C6 acyl, C2-C6 alkyl, C2-C6 alkenyl, or C2-C6 alkynyl;
• adhering said carrier assembly to a carrier wafer by bonding;
• and
• removing said semiconductor substrate such that said layer to be transferred is attached to said carrier assembly thereby achieving layer transfer of a device layer.