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US 8,912,047 B2Granted
Method for producing a metal layer on a substrate and device
AssigneeInfineon Technologies AG
InventorsKhalil Hosseini, Hans-Joachim Schulze
Life of this patent
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Abstract
A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation.
Claims24
A method for producing a semiconductor device, the method comprising:
- providing a semiconductor substrate having a first surface;
- and
- forming a first metal layer on the first surface of the semiconductor substrate by plasma depositing metal particles on the first surface of the semiconductor substrate, wherein the metal particles comprise cores comprising a first metal material and shells surrounding the cores, wherein the shells comprise a second metal material that is resistant to oxidation and wherein the metal particles are larger than 300 nm.
A method for producing semiconductor chips, the method comprising:
- providing a semiconductor wafer;
- forming a metal layer on the semiconductor wafer comprising plasma depositing metal particles on the semiconductor wafer, wherein the metal particles comprise cores, wherein the cores are selected from the group consisting of copper and aluminum, and shells surrounding the cores, wherein the shells are selected from the group consisting of silver, gold, palladium, titanium, tantalum and niobium, and wherein the metal particles are larger than 300 nm;
- and
- dicing the semiconductor wafer thereby separating the semiconductor chips.
1 more element
Dependencies are inferred from the claim text.