US 8,912,039 B2 · Semiconductor device and manufacturing method thereof

Abstract

A device that may be used for a phase change random access memory in a semiconductor device and a manufacturing method thereof are provided. The device includes a phase change unit and two sidewall electrodes respectively located on two opposite sidewalls of the phase change unit. The phase change unit includes a three layer structure, in which a phase change material layer is positioned between a top insulating material layer and a bottom insulating material layer. The first sidewall electrode and the second sidewall electrode are in contact with two opposite end faces of the phase change material layer. The contact area between electrode and phase change material is reduced, thereby obtaining a relatively small drive current and meeting a demand that the integrated level of such a device is increasingly enhanced.

Claims18

Dependent claims

A device comprising:

a phase change unit that includes a top insulating material layer, a bottom insulating material layer and a phase change material layer positioned between the top insulating material layer and the bottom insulating material layer;
a first sidewall electrode and a second sidewall electrode which are respectively located on two opposite sidewalls of the phase change unit and respectively in contact with two opposite end faces of the phase change material layer,
a first insulating material layer under the phase change unit;
a first conductive plug that penetrates through the first insulating material layer and is electrically connected to the first sidewall electrode;
and
a second insulating material layer located over the first insulating material layer and flush with a top surface of the phase change unit.

3 more elements

A method of manufacturing a device comprising:

forming a phase change unit, wherein the phase change unit includes a top insulating material layer, a bottom insulating material layer and a phase change material layer positioned between the top insulating material layer and the bottom insulating material layer;
forming a first sidewall electrode and a second sidewall electrode which are respectively located on the two opposite sidewalls of the phase change unit and respectively in contact with two opposite end faces of the phase change material layer,
depositing a second insulating material layer on the first insulating material layer, wherein the second insulating material layer is flush with a top surface of the phase change unit;
depositing a third insulating material layer on the second insulating material layer;
and
forming a second conductive plug that penetrates through the third insulating material layer, wherein a lower end of the second conductive plug is electrically connected to an upper end of the second sidewall electrode and an upper end of the second conductive plug is electrically connected to a bit line.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/691,533Filed 30 Nov 2012

Priority

CN 2011 1 045912931 Dec 2011

Published

US 2013/0168633 A14 Jul 2013

Granted

16 Dec 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10N 70/231
Multistable switching devices, e.g. memristors: based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H10B 63/20
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: comprising selection components having two electrodes, e.g. diodes
H10D 62/81
Characterised by the materials: of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or…
H10N 70/063
Shaping switching materials: by etching of pre-deposited switching material layers, e.g. lithography

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims18