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US 8,912,038 B2Granted
Method of forming emitters for a back-contact solar cell
AssigneeSunPower Corporation
InventorsBo Li, Peter J. Cousins, David D. Smith
Life of this patent
Estimating the term…
Abstract
Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Claims20
A method of forming emitters for a back-contact solar cell, the method comprising:
- forming, by printing, a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of regions separated by gaps;
- forming, by chemical vapor deposition, a second solid-state dopant source of a second conductivity type above the first solid-state dopant source, and above the substrate in the gaps of the plurality of regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type;
- and
- patterning the second solid-state dopant source to form first regions of the second solid-state dopant source in the gaps of the plurality of regions of the first solid-state dopant source but not in contact with the plurality of regions of the first solid-state dopant source, and second regions of the second solid-state dopant source on the plurality of regions of the first solid-state dopant source, wherein the first solid-state dopant source is sufficiently thick to block driving of dopants from the second regions of the second solid-state dopant source through the plurality of regions of the first solid-state dopant source.
1 more element
A method of forming emitters for a back-contact solar cell, the method comprising:
- forming, by a first dopant forming process type, a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of regions separated by gaps;
- and
- forming, by a second dopant forming process type, regions of a second solid-state dopant source of a second conductivity type above the substrate, in the gaps of the plurality of regions of the first solid-state dopant source but not in contact with the plurality of regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type, wherein the first dopant forming process type is different than the second dopant forming process type.
A method of forming emitters for a hack-contact solar cell, the method comprising:
- forming, by a first dopant forming process type, a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source comprising a plurality of regions separated by gaps;
- forming, by a second dopant forming process type, a second solid-state dopant source of a second conductivity type above the first solid-state dopant source, and above the substrate in the gaps of the plurality of regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type;
- and
- patterning the second solid-state dopant source to form first regions of the second solid-state dopant source in the gaps of the plurality of regions of the first solid-state dopant source but not in contact with the plurality of regions of the first solid-state dopant source, and second regions of the second solid-state dopant source on the plurality of regions of the first solid-state dopant source, wherein the first solid-state dopant source is sufficiently thick to block driving of dopants from the second regions of the second solid-state dopant source through the plurality of regions of the first solid-state dopant source, wherein the first dopant forming process type is different than the second dopant forming process type.
1 more element
Dependencies are inferred from the claim text.