Dicing-free LED fabrication

A method, comprising:

• forming a patternable layer over a semiconductor layer, the semiconductor layer being disposed over a substrate;
• patterning the patternable layer to form a plurality of patternable features, the patternable features being spaced apart from one another;
• forming a plurality of conductive features between the patternable features;
• forming a glue material over the conductive features;
• forming a light-to-heat conversion layer on a glass substrate;
• and
• bonding the glue material to the light-to-heat conversion layer and the glass substrate;
• and
• dividing the semiconductor layer into a plurality of different portions, wherein the dividing is performed at least in part by selectively radiating a plurality of regions of the substrate that are each aligned with a respective one of the conductive features.

A method, comprising:

• forming a patterned mask over a semiconductor layer that is disposed on a substrate, wherein the patterned mask is formed to have a bottom surface, and wherein an entire portion of the bottom surface of the patterned mask is formed over a topmost surface of the semiconductor layer, the patterned mask containing a plurality of openings;
• forming a plurality of conductive devices in the openings;
• and
• transforming the semiconductor layer into a plurality of dies at least in part by applying radiation to a plurality of first regions of the substrate that are each aligned with a respective one of the conductive devices while leaving a plurality of second regions of the substrate unradiated, wherein the radiation is applied so that a nitrogen gas is released at interfaces between the first regions of the substrate and the semiconductor layer.