Temperature control device for optoelectronic devices

A method of forming a semiconductor structure comprising a temperature control device and an optoelectronic device, said method including:

• forming a top semiconductor portion by patterning a top semiconductor layer of a semiconductor-on-insulator substrate, wherein an entirety of top semiconductor portion has a first thickness throughout upon formation and comprises:
• a primary top semiconductor portion having a semiconductor portion width;
• a pair of first laterally protruding top semiconductor portions having a greater width than said semiconductor portion width;
• and
• a pair of second laterally protruding top semiconductor portions having a greater width than said semiconductor portion width;
• forming a p-doped semiconductor in each of said pair of first laterally protruding top semiconductor portion and an n-doped semiconductor portion in each of said pair of second laterally protruding top semiconductor portions;
• forming a metal semiconductor alloy region directly on said p-doped semiconductor portion and said n-doped semiconductor portion, wherein said p-doped semiconductor portion, said n-doped semiconductor portion, and said metal semiconductor alloy region constitute a portion of a temperature control device;
• forming a current conduction path configured to pass current from said p-doped semiconductor portion, through said metal semiconductor alloy region, and to said n-doped semiconductor portion or from said n-doped semiconductor portion, through said metal semiconductor alloy region, and to said p-doped semiconductor portion;
• and
• forming an optoelectronic device comprising a semiconductor material, configured to manipulate electromagnetic radiation, and thermally coupled to said temperature control device.