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US 8,912,025 B2Granted
Method for manufacture of bright GaN LEDs using a selective removal process
AssigneeSoraa, Inc.
InventorsAndrew J. Felker, Rafael L. Aldaz, Max Batres
Life of this patent
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Abstract
A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.
Claims13
A method of manufacturing high brightness LED devices, the method of manufacturing comprising:
- providing a gallium and nitrogen substrate having a surface with a plurality of light emitting diodes;
- treating the substrate to form a plurality of trenches among the light emitting diodes, the plurality of trenches extending from the surface toward an opposing surface, by scanning a coherent beam of energy onto the surface wherein the step of treating causes formation of slag along the plurality of trenches;
- and
- subjecting the trenches and the slag to a chemical solution including potassium ferricyanide to substantially remove the slag without substantially changing the trenches,
- wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexacyanoferrate in a range of 30% to 40% by weight, potassium hydroxide in a range of 1% to 5% by weight, and water in a range of 55%-69% by weight.
2 more elements
A method of separating individual semiconductor die having light emitting diodes formed on a surface of a substrate, wherein the substrate comprises gallium nitride, the method comprising:
- forming a plurality of trenches in the substrate by scanning the substrate with a coherent beam of energy, the plurality of trenches extending from the surface of the substrate toward an opposing surface, the step of forming the plurality of trenches also forming slag along the plurality of trenches;
- subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove substantially all of the slag without substantially changing the trenches;
- and
- separating the individual semiconductor die from each other,
- wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution consists of potassium hexacyanoferrate in a range of 30% to 40% by weight, potassium hydroxide in a range of 1% to 5% by weight and water in a range of 55%-69% by weight.
2 more elements
A method of manufacturing light emitting diode (LED) devices, the method comprising:
- providing a sapphire substrate including a layer of material, the layer containing gallium and nitrogen and having a plurality of LEDs thereon;
- forming a plurality of trenches in at least the layer of material by scanning the substrate with a coherent beam of energy, thereby causing ablation of surface regions of the substrate and formation of slag along the plurality of trenches;
- subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove the slag without substantially changing the trenches;
- and
- separating the plurality of LEDs from each other using the trenches,
- wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexacyanoferrate in a range of 30% to 40% by weight, potassium hydroxide in a range of 1% to 5% by weight and water in a range of 55%-69% by weight.
3 more elements
Dependencies are inferred from the claim text.