Manufacturing method and test method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiromichi Godo, Shuhei Yoshitomi
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Abstract
Provided is a test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test. Provided is to detect a transistor whose reliability is high in a shorter period of time than a BT test and manufacture an electronic device with high reliability efficiently. Hysteresis characteristics revealed in the result of the Vg-Id measurement with light irradiation to the transistor correlate with the result of a BT test; whether the reliability of the transistor is Good or Not-Good can be judged. Accordingly, the test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test can be provided.
Claims15
A test method for evaluating a reliability of a transistor, comprising:
- obtaining a first Id-Vg curve of the transistor by measuring Id with increasing Vg from a negative value to a positive value under irradiation of light;
- obtaining a second Id-Vg curve of the transistor by measuring Id with decreasing Vg from the positive value to the negative value under irradiation of light after obtaining the first Id-Vg curve;
- and
- analyzing hysteresis characteristics of the first Id-Vg curve and the second Id-Vg curve of the transistor,
- where a voltage between a gate electrode and a source electrode of the transistor is Vg, and a current between a drain electrode of the transistor and the source electrode is Id.
A test method for evaluating a reliability of a transistor, comprising:
- obtaining a first Id-Vg curve of the transistor by measuring Id with increasing Vg from a negative value to a positive value under irradiation of light;
- obtaining a second Id-Vg curve of the transistor by measuring Id with decreasing Vg from the positive value to the negative value under irradiation of light after obtaining the first Id-Vg curve;
- and
- performing a test for Good/Not-Good judgment on the transistor based on a shift of the first Id-Vg curve of the transistor from the second Id-Vg curve,
- where a voltage between a gate electrode and a source electrode of the transistor is Vg, and a current between a drain electrode of the transistor and the source electrode is Id.
A method for manufacturing a semiconductor device, comprising:
- manufacturing a transistor;
- subsequently obtaining a first Id-Vg curve of the transistor by measuring Id with increasing Vg from a negative value to a positive value under irradiation of light;
- obtaining a second Id-Vg curve of the transistor by measuring Id with decreasing Vg from the positive value to the negative value under irradiation of light after obtaining the first Id-Vg curve;
- performing a test for Good/Not-Good judgment, using the first Id-Vg curve of the transistor;
- and
- manufacturing the semiconductor device, using the transistor,
- wherein the first Id-Vg curve and the second Id-Vg curve are obtained by measuring a current (Id) between a drain electrode and a source electrode of the transistor with changing a voltage (Vg) between a gate electrode of the transistor and the source electrode.
Dependencies are inferred from the claim text.