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US 8,912,014 B1Granted
Controlling the latchup effect
AssigneeSpansion LLC
InventorsChuan Lin, Dong-Hyuk Ju, Imran Khan, Jun Kang, Shibly S. Ahmed
Life of this patent
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Abstract
A method includes varying spacing between at least one of a source region or a drain region and a well contact region to create a group of configurations. The method further includes determining an effect of latchup on each configuration.
Claims4
A method, comprising:
- forming a plurality of complementary metal oxide semiconductor (CMOS) circuits that include respective source/drain regions that differ in size and respective well contact regions of approximately same dimensions;
- analyzing the plurality of CMOS circuits;
- and
- identifying, based on analyzing the plurality of CMOS circuits, a CMOS circuit that includes a source/drain region of a maximum size and is without latchup.
1 more element
Dependencies are inferred from the claim text.