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US 8,912,013 B2Granted
Magnetic tunnel junction device and fabrication
AssigneeQUALCOMM Incorporated
InventorsXiaochun Zhu, Seung H. Kang, Xia Li
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Abstract
A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a free layer and a spin torque enhancing layer. The spin torque enhancing layer includes a nano-oxide layer.
Claims36
A method comprising:
- forming a free layer of a magnetic tunneling junction structure;
- and
- forming a spin torque enhancing layer above the free layer, the spin torque enhancing layer including a nano-oxide layer;
- and
- forming a capping layer adjacent to the spin torque enhancing layer.
2 more elements
A method comprising:
- a first step for forming a free layer of a magnetic tunneling junction structure;
- a second step for forming a spin torque enhancing layer above the free layer, the spin torque enhancing layer including a nano-oxide layer;
- and
- a third step for forming a capping layer adjacent to the spin torque enhancing layer.
1 more element
A computer readable tangible medium storing instructions executable by a computer, the instructions comprising:
- instructions that are executable by the computer to initiate formation of a free layer above a tunnel barrier layer of a magnetic tunneling junction structure;
- and
- instructions that are executable by the computer to initiate formation of a spin torque enhancing layer above the free layer, the spin torque enhancing layer including a nano-oxide layer.
A method comprising:
- receiving design information representing at least one physical property of a semiconductor device, the semiconductor device including:
- a free layer;
- a spin torque enhancing layer responsive to the free layer, the spin torque enhancing layer comprising a nano-oxide layer;
- and
- a capping layer adjacent to the spin torque enhancing layer;
- transforming the design information to comply with a file format;
- and
- generating a data file including the transformed design information.
5 more elements
A method comprising:
- receiving a data file including design information corresponding to a semiconductor device;
- and
- fabricating the semiconductor device according to the design information, wherein the semiconductor device includes:
- a free layer;
- a spin torque enhancing layer responsive to the free layer, the spin torque enhancing layer comprising a nano-oxide layer;
- and
- a capping layer adjacent to the spin torque enhancing layer.
4 more elements
A method comprising:
- receiving design information including physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device including a structure comprising:
- a free layer;
- a spin torque enhancing layer responsive to the free layer, the spin torque enhancing layer comprising a nano-oxide layer;
- and
- a capping layer adjacent to the spin torque enhancing layer;
- and
- transforming the design information to generate a data file.
4 more elements
A method comprising:
- receiving a data file including design information including physical positioning information of a packaged semiconductor device on a circuit board;
- and
- manufacturing the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device includes a semiconductor memory array comprising at least one memory cell that includes:
- a free layer;
- a spin torque enhancing layer responsive to the free layer, the spin torque enhancing layer comprising a nano-oxide layer;
- and
- a capping layer adjacent to the spin torque enhancing layer.
4 more elements
Dependencies are inferred from the claim text.