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US 8,911,929 B2Granted
Developer and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorJun Hatakeyama
Life of this patent
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Abstract
An aqueous solution containing 0.1-10 wt % of a guanidine is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a coating, baking, exposing the coating to high-energy radiation, and developing the exposed coating in a guanidine-containing aqueous solution.
Claims9
A pattern forming process comprising the steps of:
- applying a chemically amplified positive resist composition adapted to increase an alkali dissolution rate under the action of acid onto a substrate to form a resist film;
- prebaking the resist film at a temperature of 60 to 150° C. for 10 seconds to 30 minutes;
- exposing the resist film to a desired pattern;
- further baking the resist film at 60 to 150° C. for 10 seconds to 30 minutes;
- developing the resist film in an aqueous solution comprising 0.1 to 10% by weight of at least one guanidine as a developer;
- and
- rinsing and drying the resist film.
4 more elements
Dependencies are inferred from the claim text.