Three-dimensional magnetic memory with multi-layer data storage layers

A method of fabricating a magnetic memory, the method comprising:

• forming a first storage stack that includes a first data storage layer defining a first plane and adapted to store bits of data;
• and
• forming a plurality of secondary storage stacks on top of one another on the first storage stack, wherein each of the secondary storage stacks includes a second data storage layer defining a secondary plane that is parallel to the first plane and adapted to store bits of data;
• wherein the first data storage layer and the second data storage layers are each formed from a multi-layer structure exhibiting an antiparallel coupling state at ambient temperatures.

A magnetic memory, comprising:

• a first storage stack including a first data storage layer defining a first plane and adapted to store bits of data, wherein the first data storage layer is formed from a multi-layer structure exhibiting an antiparallel coupling state at ambient temperatures;
• a second storage stack proximate to the first storage stack, wherein the second storage stack includes a second data storage layer defining a second plane that is parallel to the first plane and is adapted to store bits of data, and wherein the second data storage layer is formed from a multi-layer structure exhibiting an antiparallel coupling state at the ambient temperatures;
• and
• a third storage stack proximate to the second storage stack, wherein the third storage stack includes a third data storage layer defining a third plane that is parallel to the first and second planes and is adapted to store bits of data, and wherein the third data storage layer is formed from a multi-layer structure exhibiting an antiparallel coupling state at the ambient temperatures.