Polishing liquid and polishing method
AssigneeFUJIFILM Corporation
InventorTetsuya Kamimura
Life of this patent
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Abstract
A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride, the polishing liquid having a pH of 1.5 to 7.0, including (1) colloidal silica particles, (2) an organic acid, and (3) an anionic surfactant, and being capable of selectively polishing the second layer with respect to the first layer.
Claims4
A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished comprising at least a first layer containing polysilicon or modified polysilicon and a second layer containing at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbide, and silicon oxynitride,
- the polishing liquid having a pH of 1.5 to 7.0, consisting of (1) colloidal silica particles, (2) an organic acid, (3) an anionic surfactant, a pH adjustor, and water, and being capable of selectively polishing the second layer with respect to the first layer,
- wherein the anionic surfactant is at least one compound selected from the group consisting of a sulfonate, a sulfonic acid, a sulfate, and a phosphate.
Dependencies are inferred from the claim text.