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US 8,911,602 B2Granted
Dual hexagonal shaped plasma source
OwnerMakoto Nagashimainventor
Life of this patent
Estimating the term…
Abstract
A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.
Claims16
A plasma source, comprising:
- a first hexagonal hollow cathode, the cathode including six targets arranged in a hexagonal shape and one or more magnets associated with each of the six targets to generate and maintain a high density plasma;
- a second hexagonal hollow cathode including six targets arranged in a hexagonal shape located concentric to the first hexagonal hollow cathode and one or more magnets associated with each of the six targets;
- and
- an anode located opposite the cathode,
- wherein
- each target having one or more magnets with a single radially oriented polarity with respect to the first and second concentric hexagonal hollow cathodes;
- the magnetic field lines of the first and second hexagonal hollow cathode couple to each other;
- and
- plasma ions impact the six targets of each hexagonal hollow cathode, thereby enhancing the erosion profile of the six targets.
6 more elements
A sputtering system, including:
- a plasma source comprising:
- a first hexagonal hollow cathode, the cathode including six targets arranged in a hexagonal shape and one or more magnets associated with each of the six targets to generate and maintain a high density plasma;
- a second hexagonal hollow cathode including six targets arranged in a hexagonal shape located concentric to the first hexagonal hollow cathode and one or more magnets associated with each of the six targets;
- and
- an anode located opposite the cathode,
- wherein,
- each target having one or more magnets with a single radially oriented polarity with respect to the first and second concentric hexagonal hollow cathodes;
- an air-tight chamber in which an inert gas is admittable and exhaustible;
- the magnets associated with the targets of the first and second hexagonal hollow cathodes are respectively disposed adjacent to said targets such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said targets;
- a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited;
- and
- a back-bias power supply coupled to the substrate holder.
9 more elements
A method of magnetron sputtering, comprising:
- generating a high density plasma within a cathode of a hexagonal shaped hollow cathode magnetron, wherein
- the hexagonal shaped hollow cathode magnetron comprises a first hexagonal hollow cathode and a second hexagonal hollow cathode concentric to the first hexagonal hollow cathode;
- each hexagonal hollow cathode comprises six targets and each target having one or more magnets with a single radially oriented polarity with respect to the first and second concentric hexagonal hollow cathodes;
- and
- the magnetic field lines of the first and second hexagonal hollow cathode couple to each other;
- using the plasma to sputter atoms from a target in the hexagonal shaped hollow cathode magnetron;
- and
- forming a tapered magnetic convergent lens between the hexagonal shaped hollow cathode magnetron and a substrate using a plurality of magnets below the hexagonal shaped hollow cathode magnetron, wherein magnetic field lines are aligned in a z-direction.
5 more elements
Dependencies are inferred from the claim text.