Integrated capacitive and inductive power sources for a plasma etching chamber

A plasma processing chamber, comprising:

• (a) a top electrode assembly including,
• (i) a top capacitive electrode for processing a semiconductor wafer in the processing chamber;
• and
• (ii) an inner inductive coil and an outer inductive coil for chamber cleaning or assisting in the processing of the semiconductor wafer;
• (b) a bottom electrode disposed under the top capacitive electrode;
• (c) a dielectric ring surrounding the bottom electrode;
• (d) a conductive ring, being coupled to ground, surrounds the bottom electrode, such that the dielectric ring is disposed between the conductive ring and the bottom electrode;
• wherein the inner inductive coil is disposed over the bottom electrode and the outer inductive coil is disposed over the conductive ring.

A plasma processing chamber for capacitive coupled substrate processing and inductive coil cleaning of the plasma processing chamber, comprising:

• (a) a top electrode assembly including,
• (i) a top capacitive electrode;
• and
• (ii) an inner inductive coil and an outer inductive coil;
• (b) a bottom electrode disposed under the top capacitive electrode;
• (c) a dielectric ring surrounding the bottom electrode;
• (d) a conductive ring, being coupled to ground, surrounds the bottom electrode, such that the dielectric ring is disposed between the conductive ring and the bottom electrode, the inner inductive coil is disposed over the bottom electrode and the outer inductive coil is disposed over the conductive ring;
• and
• (e) one or more confinement rings disposed in the processing chamber adjacent to a region between the conductive ring and the outer inductive coil.