Post-tungsten CMP cleaning solution and method of using the same
AssigneeNanya Technology Corporation
InventorsHongqi Li, Anurag Jindal, Jin Lu
Life of this patent
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Abstract
A post-W CMP cleaning solution consists of carboxylic acid and deionized water. The carboxylic acid may be selected from the group consisting of (1) monocarboxylic acids; (2) dicarboxylic acids; (3) tricarboxylic acids; (4) polycarboxylic acids; (5) hydroxycarboxylic acids; (6) salts of the above-described carboxylic acids; and (7) any combination thereof. The post-W CMP cleaning solution can work well without adding any other chemical additives such as surfactants, corrosion inhibitors, pH adjusting agents or chelating agents.
Claims7
A post-tungsten CMP cleaning method for cleaning a wafer surface having at least an exposed silicon carbide surface and a tungsten surface, comprising:
- loading the wafer having at least an exposed silicon carbide surface and a tungsten surface into a scrubber;
- wetting the silicon carbide surface with a cleaning solution consisting of carboxylic acid and water within the scrubber;
- after wetting the silicon carbide surface with the cleaning solution, successively flushing and/or scrubbing the silicon carbide surface with the cleaning solution or deionized (DI) water;
- and
- after flushing and/or scrubbing the silicon carbide surface with the cleaning solution or DI water, successively drying the wafer surface.
Dependencies are inferred from the claim text.