Method to measure the characteristics in an electrical component

A method of generating a function that correlates semiconductor temperature with semiconductor lifetime, the method including the steps of:

• selecting a first semiconductor;
• determining a point of interest on the semiconductor;
• determining a material present at the point of interest on the first semiconductor;
• determining a resonance frequency of the material of interest operable to increase Stokes and anti-Stokes scattering arising from interactions between laser light from a laser and said material of interest;
• obtaining said laser tuned to the resonance frequency;
• placing the first semiconductor in an environment such that the point of interest on the first semiconductor has a first elevated temperature relative to normal expected operating conditions of the point of interest on the first semiconductor;
• irradiating the point of interest of the first semiconductor with the laser;
• detecting laser light scattering emitted by the point of interest on the first semiconductor;
• determining a temperature of the point of interest on the first semiconductor;
• determining a lifetime for the first semiconductor by operating the first semiconductor at the first elevated temperature until failure to generate a first data point;
• selecting a second semiconductor, substantially identical to the first semiconductor;
• placing the second semiconductor in an environment such that a point of interest on the second semiconductor has a second elevated temperature relative to normal expected operating conditions of the point of interest on the second semiconductor;
• the point of interest on the second semiconductor being equivalent to the point of interest on the first semiconductor;
• irradiating the point of interest on a second semiconductor with the laser;
• detecting laser light scattering emitted by the point of interest on the second semiconductor;
• determining a temperature of the point of interest on the second semiconductor;
• determining a lifetime for the second semiconductor by operating the second semiconductor until failure to generate a second data point;
• and
• conducting a mathematical procedure to generate a best-fitting curve for the set of points containing the first data point and the second data point;
• wherein said determining said resonance frequency of the material of interest based on a first and second property of the material of interest, wherein said first property comprises a vibrational property associated with lattice vibrations of said material of interest stimulated by said laser at said resonance frequency and said second property comprising an energy level of said material of interest associated with said scattering of said laser's output incident on said material of interest at said resonance frequency.