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US 8,910,355 B2Granted
Method of manufacturing a film bulk acoustic resonator with a loading element
AssigneeInternational Business Machines Corporation
InventorsJames W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
Life of this patent
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Abstract
Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.
Claims19
A method of manufacturing a semiconductor structure, comprising:
- forming a bottom electrode of a Film Bulk Acoustic Resonator (FBAR) device on a first sacrificial material and an insulator layer;
- forming a piezoelectric material on the bottom electrode;
- forming a top electrode of the FBAR device on the piezoelectric material;
- forming a loading element on the top electrode;
- forming a second sacrificial material on and surrounding the FBAR device;
- forming a sealing layer on the insulator layer and the second sacrificial material;
- forming a vent hole in the sealing layer;
- selectively removing the first sacrificial material and the second sacrificial material using an etch process through the vent hole, without removing the loading element;
- and
- modifying a frequency of the FBAR device through the vent hole of the sealing layer surrounding the FBAR device, wherein the modifying a frequency is performed after the forming the sealing layer and after the selectively removing the first sacrificial material and the second sacrificial material.
7 more elements
A method of manufacturing a semiconductor structure, comprising:
- modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device through a vent hole of a sealing layer surrounding the FBAR device,
- wherein the modifying the frequency comprises changing a thickness of a loading element of the FBAR device;
- and
- the changing of the thickness of the loading element comprises adding material to the loading element through the vent hole.
1 more element
Dependencies are inferred from the claim text.