Stable amorphous metal oxide semiconductor
AssigneeCbrite Inc.
InventorsChan-Long Shieh, Gang Yu
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Abstract
A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
Claims11
A method of forming a layer of stable amorphous metal oxide material for use as a semiconductor in semiconductor devices, the method comprising the steps of:
- providing an amorphous semiconductor ionic metal oxide material;
- providing an amorphous insulating covalent metal oxide material;
- mixing the amorphous insulating covalent metal oxide material with the amorphous semiconductor ionic metal oxide material in a predetermined ratio forming a continuous network of the amorphous semiconductor ionic metal oxide material;
- depositing the mixture of the amorphous semiconductor ionic metal oxide and the amorphous insulating covalent metal oxide on a substrate;
- and
- controlling carrier concentration of the mixture using one of oxygen and nitrogen during the deposition.
A method of forming a layer of stable amorphous metal oxide material for use as a semiconductor in semiconductor devices, the method comprising the steps of:
- providing a relatively unstable amorphous semiconductor ionic metal oxide including one of zinc oxide, indium oxide, tin oxide, and combinations thereof;
- providing a stable amorphous insulating covalent metal oxide including one of aluminum oxide, silicon oxide, magnesium oxide, beryllium oxide, boron oxide, and combinations thereof;
- mixing the amorphous insulating covalent metal oxide material with the amorphous semiconductor ionic metal oxide material in a predetermined ratio sufficient to allow a continuous network of the amorphous semiconductor ionic metal oxide and to prevent the amorphous semiconductor ionic metal oxide from becoming poly crystalline at temperatures in a range of approximately 250° C. to approximately 700° C.;
- depositing the mixture of the amorphous semiconductor ionic metal oxide and the amorphous insulating covalent metal oxide on a substrate;
- and
- controlling carrier concentration of the mixture using one of oxygen and nitrogen during the deposition.
Dependencies are inferred from the claim text.