US 8,900,897 B2 · Material with tunable index of refraction

Abstract

Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Claims14

Dependent claims

An optoelectronic device comprising a first component and a second component;

wherein the first component comprises a semiconductor,
wherein the second component comprises an alloy of AlN and AlSb having a refractive index substantially the same as that of the first component,
wherein the second component has a negligible extinction coefficient at wavelengths of light used in the optoelectronic device, and
wherein the first component is in optical contact with the second component,
wherein the semiconductor comprises GaAs or AlGaInP and the alloy consists of about 35 mole % AlN and about 65 mole % AlSb.

2 more elements

Dependencies are inferred from the claim text.

Material with tunable index of refraction

Life of this patent

Material with tunable index of refraction

Life of this patent

Abstract

Claims14