Back to results
US 8,897,089 B2Granted
Nonvolatile memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJinTae Kim, Doogon Kim
Life of this patent
Estimating the term…
Abstract
Nonvolatile memory devices including memory cell arrays with first bit line regions and common source tapping regions which are alternately disposed on a substrate along a direction, a page buffer including second bit line regions aligned with the first bit line regions and page buffer tapping regions aligned with the common source tapping regions, and a plurality of bit lines spaced apart from one another and extending to the second bit line regions from the first bit line regions.
Claims20
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of first bit line regions alternating with a plurality of common source tapping regions on a substrate;
- a page buffer including a plurality of second bit line regions aligned with the first bit line regions and a plurality of page buffer tapping regions aligned with the common source tapping regions;
- and
- a plurality of bit lines spaced apart from one another and extending to the second bit line regions from the first bit line regions.
1 more element
A nonvolatile memory device, comprising:
- bit line groups alternating with tapping line groups, each of the bit line groups including a plurality of memory cell strings and a plurality of bit lines connected to a page buffer, each of the tapping line groups including
- at least one common source tapping line configured to supply power to a common source line connected to the plurality of memory cell strings, and
- at least one page buffer tapping line configured to supply power to the page buffer.
A nonvolatile memory device, comprising:
- a first mesh structure including a plurality of common source regions of a common source line extending in a first direction and a plurality of common source tapping lines extending in a second direction, the common source tapping lines connected to the common source regions at cross points.
Dependencies are inferred from the claim text.