Memory device and operating method of memory device and memory system

A memory device comprising:

• a command input unit suitable for receiving a plurality of commands;
• an address input unit suitable for receiving a plurality of address bits;
• a data input unit suitable for receiving a plurality of data;
• a command decoder suitable for decoding the plurality of commands and generating an internal active command, an internal mode setting command, an internal write command, an internal precharge command, an internal refresh command, and an internal read command;
• a mode decoder suitable for generating a repair mode signal by using the internal mode setting command and the address bits as a mode setting code;
• a temporary storage unit suitable for temporarily storing the address bits as a fail address, when the Internal active command and the repair mode signal are activated;
• a control unit suitable for determining whether to perform a program operation in response to activation of the internal write command and the repair mode signal;
• and
• a programmable storage unit suitable for being programmed with the temporarily-stored fail address, when the control unit determines to perform the program operation.

An operating method of a memory system, comprising:

• entering, by a memory device, a repair mode according to control of a memory controller;
• applying, by the memory controller, a fail address and an active command to the memory device;
• temporarily storing, by the memory device, the fail address;
• applying, by the memory controller, a write command to the memory device;
• determining, by the memory device, whether to perform a program operation, in response to the application of the write command;
• programming, by the memory device, the temporarily-stored fail address into a programmable storage unit inside the memory device, when the program operation is determined to be performed;
• and
• applying, by the memory controller, a precharge command to the memory device before the programming of the temporarily-stored fail address is completed.