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US 8,897,081 B2Granted
Semiconductor memory device
AssigneeSK hynix Inc.
InventorsYoung-Jun Ku, Ki-Ho Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes a pad configured to receive a first write data from outside of the semiconductor memory device, and a write circuit configured to generate a plurality of second write data which are to be written in memory cells of all banks to be tested in response to a test mode signal, data strobe signals, a write enable signal, and the first write data transferred through the pad.
Claims10
A semiconductor memory device comprising:
- a pad configured to receive a first write data from outside of the semiconductor memory device;
- and
- a write circuit configured to generate a plurality of second write data which are to be written in memory cells of all banks to be tested in response to a test mode signal, data strobe signals, a write enable signal, and the first write data transferred through the pad.
Dependencies are inferred from the claim text.