Method, apparatus, and system for improved read operation in memory

A method comprising:

• receiving a command to read a target cell of a memory array;
• reading cells adjacent the target cell before reading the target cell;
• obtaining feedback information from reading the cells adjacent the target cell, wherein obtaining the feedback information comprises determining shift threshold voltage values of the target cell based on threshold voltage values of the cells in a second row, and wherein each of the shift threshold voltage values is determined based on one of the threshold voltage values;
• and
• reading the target cell using a voltage value determined at least in part by the feedback information, wherein reading the target cell comprises applying a voltage to a line used to access the target cell, wherein a first value of the voltage is a function of the shift threshold voltage values and an initial value of an additional voltage used to read the cells of the second row.

A method comprising:

• receiving from an electronic device a program command to read a target cell of a memory array;
• reading a first cell to determine a threshold voltage value of the first cell;
• and
• reading the target cell using a voltage with a voltage value based on the threshold voltage value, wherein reading the target cell comprises applying the voltage to a line used to access the target cell, wherein reading the first cell comprises applying an additional voltage to an additional line used to access the first cell, and wherein the voltage has a first initial voltage value greater than a second initial voltage value of the additional voltage.

An apparatus comprising:

• a flash memory device comprising a memory array including a first cell and a second cell, and a module coupled to the memory array, the module configured to:
• determine a threshold voltage value of the first cell of the memory array, the first cell being adjacent the second cell of the memory array;
• read the second cell of the memory array using a voltage value on a line used to access the second cell, wherein the voltage value is based on the threshold voltage value of the first cell;
• and
• determine a shift threshold voltage value of the second cell corresponding to a shift in the threshold voltage value of the first cell, wherein determining the shift threshold voltage value comprises accessing a storage area to locate an entry indicating the shift threshold voltage value based on the threshold voltage value of the first cell, wherein determining the threshold voltage value of the first cell comprises a applying an additional voltage having a first initial voltage value to a line used to access the first cell, and wherein the voltage on the line used to access the second cell has a second initial voltage value approximately equal to a sum of the first initial voltage value and the shift threshold voltage value.