Magnetoresistance effect element and magnetic memory

A magnetic memory comprising:

• a magnetoresistance effect element;
• a first electrode and a second electrode configured to supply an electric current to the magnetoresistance effect element;
• a first wiring electrically connected to the first electrode;
• a second wiring electrically connected to the second electrode;
• and
• a write circuit which is electrically connected to the first wiring and the second wiring;
• and bidirectionally supplies an electric current to the magnetoresistance effect element, and
• the magnetoresistance effect element comprising:
• a first magnetic layer having an axis of easy magnetization in a direction perpendicular to a film surface;
• a second magnetic layer having an axis of easy magnetization in a direction perpendicular to a film surface;
• a first nonmagnetic layer formed between the first magnetic layer and the second magnetic layer, an electric current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer making a magnetization direction in the first magnetic layer variable;
• a first interface magnetic layer comprising an in-plane magnetization magnetic film formed between the first magnetic layer and the first nonmagnetic layer;
• and
• a second nonmagnetic layer formed in the first interface magnetic layer and having an amorphous structure, the second nonmagnetic layer dividing the first interface magnetic layer into an upper first interface magnetic layer comprising one part of the in-plane magnetization magnetic film and a lower first interface magnetic layer comprising another part of the in-plane magnetization magnetic film, wherein the upper and lower first interface magnetic layers sandwich the second nonmagnetic layer, and wherein a combination layer of the upper first interface magnetic layer, the lower first interface magnetic layer, and the first magnetic layer has a magnetization direction perpendicular to the film surface.