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US 8,897,048 B2Granted
Semiconductor memory device and programming method thereof
AssigneeSK hynix Inc.
InventorWon Kyung Kang
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes a memory cell block configured to include a plurality of main cells and a plurality of CAM cells, a plurality of page buffers configured to store data to be programmed into the memory cell block, and a Y decoder configured to transfer CAM data to respective page buffers, selected from among the plurality of page buffers, in response to a data determination signal and CAM column addresses whenever the CAM data is inputted in a CAM data input mode.
Claims17
A semiconductor memory device, comprising:
- a memory cell block comprising a plurality of main cells and a plurality of CAM cells;
- a plurality of page buffers configured to store data to be programmed into the memory cell block;
- and
- a Y decoder transfers a CAM datum to multiple page buffers, selected from among the plurality of page buffers, in response to a data determination signal and CAM column addresses when the CAM datum is inputted in a CAM data input mode,
- wherein the memory cell block stores the CAM data in each of the plurality of CAM cells, corresponding to a set number, in the CAM data input mode.
2 more elements
A semiconductor memory device, comprising:
- a memory cell block configured to comprise a plurality of main cells and a plurality of CAM cells;
- a plurality of page buffers configured to store data to be programmed into the memory cell block;
- a CAM data input mode detector configured to generate a data determination signal in response to a block address and a page address;
- a column counter configured to output CAM column addresses, each increased by a set number, or normal column addresses, each increased by 1, in response to the data determination signal;
- and
- a Y decoder configured to transfer CAM data to respective page buffers, selected from among the plurality of page buffers, in response to the data determination signal and the CAM column addresses whenever the CAM data is inputted in a CAM data input mode.
3 more elements
A programming method of a semiconductor memory device, comprising:
- making a determination of whether a mode is a CAM data input mode or a normal data input mode in response to a block address, a page address, an extra-block enable signal and a data input signal;
- outputting CAM column addresses by counting an initial column address so that the initial column address becomes a set number if, as a result of the determination, the mode is the CAM data input mode;
- storing external CAM data in respective page buffers corresponding to the set number, from among a plurality of page buffers, in response to the CAM column addresses whenever the CAM data is inputted;
- programming the stored CAM data into a CAM cell unit of a memory cell block.
- outputting normal column addresses by increasing the initial column address by 1 if, as a result of the determination, the mode is a normal data input mode;
- storing external normal data in one of the plurality of page buffers in response to the normal column addresses whenever the external normal data is inputted;
- and
- programming the stored normal data in a main cell unit of the memory cell block.
5 more elements
Dependencies are inferred from the claim text.