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US 8,896,778 B2Granted
Liquid crystal display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.
Claims36
A semiconductor device comprising:
- a gate electrode;
- a gate insulating film over the gate electrode;
- a microcrystalline semiconductor film including a channel formation region over the gate insulating film;
- a channel protective layer over the channel formation region of the microcrystalline semiconductor film;
- a source region and a drain region over the channel protective layer;
- a source electrode and a drain electrode over the source region and the drain region;
- an insulating film over the channel protective layer, the source electrode, and the drain electrode;
- a pixel electrode over the insulating film, the pixel electrode being electrically connected to the source electrode or the drain electrode;
- a spacer over the pixel electrode, the spacer overlapping with the gate electrode;
- a counter electrode over the spacer;
- and
- a light blocking film, a first color filter film, and a second color filter film over the counter electrode,
- wherein the light blocking film includes a region overlapping with the spacer,
- wherein each of the first color filter film and the second color filter film overlaps with the region, and
- wherein an entire portion of the microcrystalline semiconductor film is overlapped with the gate electrode.
12 more elements
A semiconductor device comprising:
- a substrate capable of transmitting light;
- a gate wiring over the substrate;
- a gate insulating film over the gate wiring;
- a semiconductor film comprising silicon, the semiconductor film including a channel formation region over the gate wiring with the gate insulating film therebetween;
- a source electrode and a drain electrode over the semiconductor film;
- an insulating film over the semiconductor film, the source electrode, and the drain electrode;
- and
- a pixel electrode over the insulating film, the pixel electrode being electrically connected to the source electrode or the drain electrode;
- a spacer over the pixel electrode, the spacer overlapping with the gate wiring;
- a counter electrode over the spacer;
- and
- a light blocking film, a first color filter film, and a second color filter film over the counter electrode,
- wherein the light blocking film includes a region overlapping with the spacer,
- wherein each of the first color filter film and the second color filter film overlaps with the region, and
- wherein an entire portion of the semiconductor film is overlapped with the gate wiring.
12 more elements
A semiconductor device comprising:
- a substrate capable of transmitting light;
- a gate wiring over the substrate;
- a gate insulating film over the gate wiring;
- a semiconductor film, the semiconductor film including a channel formation region over the gate wiring with the gate insulating film therebetween;
- a source electrode and a drain electrode over the semiconductor film;
- an insulating film over the semiconductor film, the source electrode, and the drain electrode;
- and
- a pixel electrode over the insulating film, the pixel electrode being electrically connected to the source electrode or the drain electrode;
- a spacer over the pixel electrode, the spacer overlapping with the gate wiring;
- a counter electrode over the spacer;
- and
- a light blocking film, a first color filter film, and a second color filter film over the counter electrode,
- wherein the light blocking film includes a region overlapping with the spacer,
- wherein each of the first color filter film and the second color filter film overlaps with the region, and
- wherein an entire portion of the semiconductor film is overlapped with the gate wiring.
12 more elements
A semiconductor device comprising:
- a substrate capable of transmitting light;
- a gate wiring over the substrate;
- a gate insulating film over the gate wiring;
- a semiconductor film, the semiconductor film including a channel formation region over the gate wiring with the gate insulating film therebetween;
- a source electrode and a drain electrode over the semiconductor film;
- an insulating film over the semiconductor film, the source electrode, and the drain electrode;
- and
- a pixel electrode over the insulating film, the pixel electrode being electrically connected to the source electrode or the drain electrode;
- a spacer over the pixel electrode, the spacer overlapping with the gate wiring;
- a counter electrode over the spacer;
- and
- a light blocking film, a first color filter film, and a second color filter film over the counter electrode,
- wherein the light blocking film includes a region overlapping with the spacer,
- wherein each of the first color filter film and the second color filter film overlaps with the region,
- wherein an entire portion of the semiconductor film is overlapped with the gate wiring, and
- wherein the semiconductor film comprises amorphous portion and crystalline portion.
13 more elements
A semiconductor device comprising:
- a substrate capable of transmitting light;
- a gate wiring over the substrate;
- a gate insulating film over the gate wiring;
- a semiconductor film, the semiconductor film including a channel formation region over the gate wiring with the gate insulating film therebetween;
- a channel protective layer over the channel formation region;
- a source electrode and a drain electrode over the semiconductor film;
- an insulating film over the channel protective layer, the source electrode, and the drain electrode;
- and
- a pixel electrode over the insulating film, the pixel electrode being electrically connected to the source electrode or the drain electrode;
- a spacer over the pixel electrode, the spacer overlapping with the gate wiring;
- a counter electrode over the spacer;
- and
- a light blocking film, a first color filter film, and a second color filter film over the counter electrode,
- wherein the light blocking film includes a region overlapping with the spacer,
- wherein each of the first color filter film and the second color filter film overlaps with the region, and
- wherein an entire portion of the semiconductor film is overlapped with the gate wiring.
13 more elements
A semiconductor device comprising:
- a substrate capable of transmitting light;
- a gate wiring over the substrate;
- a gate insulating film over the gate wiring;
- a semiconductor film, the semiconductor film including a channel formation region over the gate wiring with the gate insulating film therebetween;
- a channel protective layer over the channel formation region;
- a source electrode and a drain electrode over the semiconductor film;
- an insulating film over the channel protective layer, the source electrode, and the drain electrode;
- and
- a pixel electrode over the insulating film, the pixel electrode being electrically connected to the source electrode or the drain electrode;
- a spacer over the pixel electrode, the spacer overlapping with the gate wiring;
- a counter electrode over the spacer;
- and
- a light blocking film, a first color filter film, and a second color filter film over the counter electrode,
- wherein the light blocking film includes a region overlapping with the spacer,
- wherein each of the first color filter film and the second color filter film overlaps with the region,
- wherein an entire portion of the semiconductor film is overlapped with the gate wiring, and
- wherein the semiconductor film comprises amorphous portion and crystalline portion.
14 more elements
Dependencies are inferred from the claim text.