Solid-state image sensor, method of manufacturing the same, and camera

A method of manufacturing a solid-state image sensor including a substrate in which are arranged a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that is arranged to contact a lower face of the first semiconductor region and functions as a charge accumulation region, a fourth semiconductor region of the second conductivity type that is arranged apart from the second semiconductor region, a fifth semiconductor region of the second conductivity type, and a transfer gate that forms a channel to transfer charges accumulated in the second semiconductor region to the fourth semiconductor region, the method comprising:

• implanting ions of the first conductivity type into a region of the substrate, such that the region is changed to a third semiconductor region including a side face surrounded by the second semiconductor region, an upper face contacting the second semiconductor region, and a lower face contacting the fifth semiconductor region, the third semiconductor region not contacting the first semiconductor region,
• wherein a portion extending from the upper face of the third semiconductor region to the lower face of the third semiconductor region has the first conductivity type.

A method of manufacturing a solid-state image sensor including a substrate in which are arranged a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that is arranged to contact a lower face of the first semiconductor region and functions as a charge accumulation region, a fourth semiconductor region of the second conductivity type that is arranged apart from the second semiconductor region, a fifth semiconductor region of the second conductivity type, and a transfer gate that forms a channel to transfer charges accumulated in the second semiconductor region to the fourth semiconductor region, the method comprising:

• implanting ions of the first conductivity type into a region of the substrate, such that the region is changed to a third semiconductor region including a side face and an upper face contacting the second semiconductor region, and a lower face contacting the fifth semiconductor region, the third semiconductor region not contacting the first semiconductor region,
• wherein a portion extending from the upper face of the third semiconductor region to the lower face of the third semiconductor region has the second conductivity type, and has an impurity concentration lower than that of the second semiconductor region.