Metal-insulator-metal capacitors on glass substrates
AssigneeQUALCOMM MEMS Technologies, Inc.
InventorsJon Bradley Lasiter, Ravindra V. Shenoy, Donald William Kidwell
Life of this patent
Estimating the term…
Abstract
This disclosure provides systems, methods, and apparatus for metal-insulator-metal capacitors on glass substrates. In one aspect, an apparatus may include a glass substrate, with the glass substrate defining at least one via in the glass substrate. A first electrode layer may be disposed over surfaces of the glass substrate, including surfaces of the at least one via. A dielectric layer may be disposed on the first electrode layer. A second electrode layer may be disposed on the dielectric layer, with the dielectric layer electrically isolating the first electrode layer from the second electrode layer.
Claims31
An apparatus comprising:
- a glass substrate having a first surface and a second surface opposite the first surface, the glass substrate including a plurality of first vias, each of the first vias extending from the first surface towards the second surface, each first via defined by an inner via surface of the glass substrate;
- a first electrode layer disposed over regions of the first surface of the glass substrate and disposed on the inner via surfaces in the first vias;
- a dielectric layer disposed on the first electrode layer including on portions of the first electrode layer in the first vias;
- and
- a second electrode layer disposed on the dielectric layer including on portions of the dielectric layer in the first vias, the dielectric layer electrically isolating the first electrode layer from the second electrode layer in each of the first vias;
- and
- wherein at least the portions of the first electrode layer, the portions of the dielectric layer, and the portions of the second electrode layer in the first vias form a capacitive structure having a capacitance.
An apparatus comprising:
- a glass substrate having a first surface and a second surface opposite the first surface, the glass substrate including a plurality of first vias, each of the first vias extending from the first surface towards the second surface, each first via defined by an inner via surface of the glass substrate;
- a first electrode layer disposed over regions of the first surface of the glass substrate and disposed on the inner via surfaces in the first vias;
- electrically isolating means disposed on the first electrode layer including on portions of the first electrode layer in the first vias;
- a second electrode layer disposed on the electrically isolating means including on portions of the electrically isolating means in the first vias, the electrically isolating means electrically isolating the first electrode layer from the second electrode layer in each of the first vias;
- and
- wherein at least the portions of the first electrode layer, the portions of the electrically isolating means, and the portions of the second electrode layer in the first vias form a capacitive structure having a capacitance.
A method comprising:
- forming a plurality of first vias in a glass substrate, the glass substrate having a first surface and a second surface opposite the first surface, each of the first vias extending from the first surface towards the second surface, each first via defined by an inner via surface of the glass substrate;
- depositing a first electrode layer over regions of the first surface of the glass substrate and disposed on the inner via surfaces in the first vias;
- depositing a dielectric layer on the first electrode layer including on portions of the first electrode layer in the first vias;
- and
- depositing a second electrode layer on the dielectric layer including on portions of the dielectric layer in the first vias, such that the dielectric layer electrically isolates the first electrode layer from the second electrode layer in each of the first vias;
- and
- wherein at least the portions of the first electrode layer, the portions of the dielectric layer, and the portions of the second electrode layer in the first vias form a capacitive structure having a capacitance.
Dependencies are inferred from the claim text.