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US 8,896,395 B2Granted
Accoustic resonator having multiple lateral features
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsDariusz Burak, Phil Nikkel, Chris Feng
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Abstract
A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.
Claims20
A thin film bulk acoustic resonator (FBAR), comprising:
- a first electrode on a substrate over a cavity;
- a piezoelectric layer on the first electrode;
- a second electrode on the piezoelectric layer;
- a plurality of lateral features on a surface of the second electrode, the plurality of lateral features comprising a plurality of stepped structures, having different widths, consecutively stacked on the second electrode.
1 more element
A thin film bulk acoustic resonator (FBAR), comprising:
- a first electrode on a substrate;
- a piezoelectric layer on the first electrode;
- a second electrode on the piezoelectric layer;
- an outer multi-interface frame pattern on a surface of the second electrode at an outer region of the second electrode, the outer multi-interface frame pattern comprising a plurality of first stepped structures, having different widths, consecutively stacked on the second electrode;
- and
- an inner multi-interface frame pattern on the surface of the second electrode at a center region of the second electrode, the inner multi-interface frame pattern comprising a plurality of second stepped structures, having different widths, consecutively stacked on the second electrode.
3 more elements
A bulk acoustic wave (BAW) resonator, comprising:
- an electrode stacked on a piezoelectric layer of the BAW resonator;
- and
- at least one of an outer multi-interface frame pattern at an outer region of the second electrode and an inner multi-interface frame pattern at a center region of the second electrode,
- wherein the outer multi-interface frame pattern comprises a plurality of first stacked stepped structures having different widths and the inner multi-interface frame pattern comprises a plurality of second stacked stepped structures having different widths, and
- wherein at least one of the first and second stacked stepped structures of one of the outer multi-interface frame pattern and the inner multi-interface frame pattern is formed of a dielectric material.
2 more elements
Dependencies are inferred from the claim text.