Back to results
US 8,896,366 B2Granted
Internal voltage generation circuit of semiconductor device and method for operating the same
AssigneeSK hynix Inc.
InventorHyuk-Choong Kang
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeSK hynix Inc.
InventorHyuk-Choong Kang
Estimating the term…
A semiconductor device includes a power supply voltage level/slope detection unit configured to detect a level of a power supply voltage and a slope of a power supply voltage curve, and output a power supply voltage level/slope detection signal, a pumping voltage detection unit configured to detect a level of a pumping voltage based on a reference pumping level to output a pumping detection signal, an oscillation signal generation unit configured to generate an oscillation signal in response to the pumping detection signal and the power supply voltage level/slope detection signal, and a pumping unit configured to generate the pumping voltage by performing a charge pumping operation in response to the oscillation signal.
A semiconductor device comprising:
A semiconductor device comprising:
A method for operating a semiconductor device, comprising:
Dependencies are inferred from the claim text.
From the US filing history. Foreign family members aren’t listed.
Drawings are temporarily unavailable. Open the PDF at USPTO
Systems for regulating electric variables by detecting deviations in the electric input
Power supply arrangements , e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels:…
Using resistors or capacitors, e.g. potential divider: using capacitors charged and discharged alternately by semiconductor devices with control…
Details of apparatus for conversion: details of control, feedback or regulation circuits
About 6 years 2 months of term left · ends 11 Jan 2033 (estimated)
The present application claims priority of Korean Patent Application No. 10-2012-0083837, filed on Jul. 31, 2012, which is incorporated herein by reference in its entirety.
1. Field
Exemplary embodiments of the present invention relate to a semiconductor design technology, and more particularly, to an internal voltage generation circuit of a semiconductor device and a method for operating the same.
FIG. 1 is a block diagram illustrating an internal voltage generation circuit of a conventional semiconductor device.
FIGS. 2A to 2C are timing diagrams illustrating the operation of the internal voltage generation circuit shown in FIG. 1.
FIG. 3 is a block diagram illustrating an internal voltage generation circuit of a semiconductor device in accordance with an embodiment of the present invention.
Exemplary embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Throughout the disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the present invention.
FIG. 3 is a block diagram of an internal voltage generation circuit of a semiconductor device in accordance with an embodiment of the present invention.
Referring to FIG. 3, the internal voltage generation circuit includes a pumping voltage detection unit 310, an oscillation signal generation unit 320, a pumping unit 330, and a power supply voltage (VDD) level/slope detection unit 340.