Semiconductor device and method of forming vertically offset conductive pillars over first substrate aligned to vertically offset BOT interconnect sites formed over second substrate

Abstract

A semiconductor device has a first substrate and first conductive pillars formed over the first substrate. Second conductive pillars are formed over the first substrate alternating with the first conductive pillars. The second conductive pillars are vertically offset with respect to the first conductive pillars. First BOT interconnect sites are formed over a second substrate. Second BOT interconnect sites are formed over the second substrate alternating with the first interconnect sites. The second interconnect sites are vertically offset with respect to the first interconnect sites. The first substrate is mounted to the second substrate such that the first conductive pillars are aligned with and electrically connected to the first interconnect sites and the second conductive pillars are aligned with and electrically connected to the second interconnect sites. An underfill material is deposited between the first and second substrates. The first substrate can be a flipchip type semiconductor device.

Dependencies are inferred from the claim text.