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US 8,896,122 B2Granted
Semiconductor devices having gates including oxidized nickel
AssigneeCree, Inc.
InventorsVan Mieczkowski, Helmut Hagleitner, Kevin Haberern
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Abstract
Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.
Claims14
A Schottky barrier semiconductor device comprising:
- a wide bandgap semiconductor layer;
- a gate on the wide bandgap semiconductor layer, the gate comprising a metal layer directly on the wide bandgap semiconductor layer, the metal layer including a nickel oxide (NiO) layer;
- and a layer of Nickel between the wide bandgap semiconductor layer and the NiO layer such that the wide bandgap layer does not contact the NiO layer.
A Schottky barrier semiconductor device comprising:
- a first layer comprising gallium nitride;
- a second layer comprising nickel oxide on the first layer;
- a third layer comprising tantalum on the second layer, remote from the first layer;
- a fourth layer comprising platinum on the third layer, remote from the second layer;
- and
- a layer of Nickel between the first and second layers such that the gallium nitride layer does not contact the nickel oxide layer.
3 more elements
Dependencies are inferred from the claim text.