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US 8,896,119 B2Granted
Bonding material for semiconductor devices
AssigneeSenju Metal Industry Co., Ltd.
InventorsYoshitsugu Sakamoto, Hiroyuki Yamada, Yoshie Yamanaka, Tsukasa Ohnishi, Shunsaku Yoshikawa, Kenzo Tadokoro
Life of this patent
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Abstract
A semiconductor device is provided which has internal bonds which do not melt at the time of mounting on a substrate. A bonding material is used for internal bonding of the semiconductor device. The bonding material is obtained by filling the pores of a porous metal body having a mesh-like structure and covering the surface thereof with Sn or an Sn-based solder alloy.
Claims11
A solder bonding material comprising:
- an electrically conductive porous metal body having a mesh-like structure with pores, and
- Sn or an Sn-based lead-free solder alloy which impregnates the pores of the porous metal body and covers a surface of the porous metal body, the porous metal body having a porosity expressed as a proportion of the cross-sectional area of the pores with respect to a cross-sectional area of the porous metal body of 20-30%,
- wherein in a state before the solder bonding material is heated to bond the solder bonding material to another member, the Sn or the Sn-based lead-free solder alloy is bonded to the porous metal body by an intermetallic compound layer.
Dependencies are inferred from the claim text.