Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure

A semiconductor device, comprising:

• a substrate;
• an integrated passive device (IPD) structure formed over a first surface of the substrate;
• a first insulating layer formed over the first surface of the substrate;
• a conductive via formed through the first insulating layer;
• a via formed through a second surface of the substrate opposite the first surface of the substrate and extending to the conductive via;
• and
• a shielding layer formed over the second surface of the substrate and extending into the via to the conductive via.

A semiconductor device, comprising:

• a substrate;
• a conductive via formed partially through a first surface of the substrate;
• an integrated passive device (IPD) structure formed over the first surface of the substrate;
• a via formed through a second surface of the substrate opposite the first surface of the substrate and extending to the conductive via;
• and
• a shielding layer formed over the second surface of the substrate and extending into the via to the conductive via.

A semiconductor device, comprising:

• a substrate;
• an integrated passive device (IPD) structure formed over a first surface of the substrate;
• a via formed through a second surface of the substrate opposite the first surface of the substrate;
• and
• a shielding layer formed over the second surface of the substrate and extending into the via.