Microelectronic devices and methods for manufacturing microelectronic devices
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Kristy A. Campbell
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Kristy A. Campbell
Estimating the term…
Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method includes constructing a radiation sensitive component in and/or on a microelectronic device, placing a curable component in and/or on the microelectronic device, and forming a barrier in and/or on the microelectronic device to at least partially inhibit irradiation of the radiation sensitive component. The radiation sensitive component can be doped silicon, chalcogenide, polymeric random access memory, or any other component that is altered when irradiated with one or more specific frequencies of radiation. The curable component can be an adhesive, an underfill layer, an encapsulant, a stand-off, or any other feature constructed of a material that requires curing by irradiation.
A microelectronic device, comprising:
A microelectronic device, comprising:
A microelectronic device, comprising:
Dependencies are inferred from the claim text.