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US 8,896,100 B2Granted
III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
AssigneeSophia School Corporation
InventorsKatsumi Kishino, Akihiko Kikuchi
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Abstract
A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.
Claims29
A III nitride structure comprising:
- a film having a surface composed of a metal formed in a predetermined region on the surface of a substrate;
- a first fine columnar crystal composed of a III nitride semiconductor formed on the surface of said substrate where said film is not formed;
- and
- a second fine columnar crystal composed of a III nitride semiconductor formed on said film,
- wherein a spatial occupancy ratio of said second fine columnar crystal is lower than a spatial occupancy ratio of said first fine columnar crystal, and
- a thickness of said film perpendicular to said surface of said substrate is 2 nm or more and 100 nm or less.
3 more elements
A III nitride structure comprising:
- a film having a surface composed of a metal formed in a predetermined region on the surface of a substrate;
- and
- a plurality of fine columnar crystal composed of at least a III nitride semiconductor formed on the surface of said substrate,
- wherein the spatial occupancy ratio of said plurality of fine columnar crystal on the surface of the substrate where the film is not formed is higher than that on said film, and
- a thickness of said film perpendicular to said surface of said substrate is 2 nm or more and 100 nm or less,
- wherein said III nitride structure has a wall shape in which said plurality of fine columnar crystals are arranged and disposed in one direction on the surface of said substrate where said film is not formed.
3 more elements
A III nitride structure comprising:
- a film having a surface composed of a metal formed in a predetermined region on the surface of a substrate;
- and
- a fine columnar crystal composed of at least a III nitride semiconductor formed on the surface of said substrate,
- wherein the spatial occupancy ratio of said fine columnar crystal on the surface of the substrate where the film is not formed is higher than that on said film, and
- a thickness of said film perpendicular to said surface of said substrate is 2 nm or more and 100 nm or less,
- wherein said fine columnar crystal has a wall shape extending in one direction in a top view on the surface of said substrate where said film is not formed.
3 more elements
A III nitride structure comprising:
- a film having a surface composed of a metal formed in a predetermined region on the surface of a substrate;
- and
- a fine columnar crystal composed of at least a III nitride semiconductor formed on the surface of said substrate,
- wherein the spatial occupancy ratio of said fine columnar crystal on the surface of the substrate where the film is not formed is higher than that on said film, and
- a thickness of said film perpendicular to said surface of said substrate is 2 nm or more and 100 nm or less,
- wherein said film is formed with a predetermined pattern in a stripe shape.
3 more elements
A III nitride structure comprising:
- a film having a surface composed of a metal formed in a predetermined region on the surface of a substrate;
- and
- a fine columnar crystal composed of at least a III nitride semiconductor formed on the surface of said substrate,
- wherein the spatial occupancy ratio of said fine columnar crystal on the surface of the substrate where the film is not formed is higher than that on said film, and
- a thickness of said film perpendicular to said surface of said substrate is 2 nm or more and 100 nm or less,
- wherein said fine columnar crystal has a diameter of 1000 nm or less, or
- said fine columnar crystal extends in one direction and the width perpendicular to the extending direction is 800 nm or less.
4 more elements
A method for manufacturing a fine columnar crystal comprising:
- forming a film having a surface made of a metal in a predetermined region on a surface of a substrate, and
- growing a fine columnar crystal made of a III nitride semiconductor at least on the surface of said substrate where said film is not formed, by introducing a growth source material to the surface of said substrate and, assuming the region on said film to be a growth suppressing region, suppressing the growth of the fine columnar crystal made of the III nitride semiconductor on said growth suppressing region,
- a thickness of said film perpendicular to said surface of said substrate is 2 nm or more and 100 nm or less.
Dependencies are inferred from the claim text.