Power storage device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
To provide a power storage device with improved cycle characteristics and a method for manufacturing the power storage device, a power storage device is provided with a conductive layer in contact with a surface of an active material layer including a silicon layer after an oxide film, such as a natural oxide film, which is formed on the surface of the active material layer is removed. The conductive layer is thus provided in contact with the surface of the active material layer including a silicon layer, whereby the conductivity of the electrode surface of the power storage device is improved; therefore, cycle characteristics of the power storage device can be improved.
Claims22
A power storage device comprising:
- a current collector;
- an active material layer over the current collector, the active material layer having:
- a first region comprising crystalline silicon;
- and
- a second region comprising crystalline silicon protrusions on the first region, wherein the crystalline silicon protrusions continuously extend from the first region;
- and
- a conductive layer which is on and in contact with a surface of the second region of the active material layer.
A power storage device comprising:
- a current collector comprising a metal element;
- a mixed layer comprising the metal element and silicon on the current collector;
- an active material layer over the mixed layer, the active material layer having:
- a first region comprising crystalline silicon;
- and
- a second region comprising crystalline silicon protrusions on the first region, wherein the crystalline silicon protrusions continuously extend from the first region;
- and
- a conductive layer which is on and in contact with a surface of the second region of the active material layer.
A power storage device comprising:
- a current collector comprising a metal element;
- a mixed layer comprising the metal element and silicon on the current collector;
- a metal oxide layer comprising the metal element on the mixed layer;
- an active material layer on the metal oxide layer, the active material layer having:
- a first region comprising crystalline silicon;
- and
- a second region comprising crystalline silicon protrusions on the first region, wherein the crystalline silicon protrusions continuously extend from the first region;
- and
- a conductive layer which is on and in contact with a surface of the second region of the active material layer.
Dependencies are inferred from the claim text.