Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

A multi-channel vertical transient voltage suppressing (VTVS) with integrated EMI filter device comprising:

• a semiconductor substrate comprising a heavily doped layer of a first conductivity type extending to a bottom surface of said semiconductor substrate contacting a bottom electrode on a bottom surface of the semiconductor substrate;
• an epitaxial layer supported on top of the semiconductor substrate;
• a first channel comprises an input electrode connected to a first dopant region of a second conductivity type near a top surface of said epitaxial layer forming a first vertical PN junction with the epitaxial layer;
• a second channel comprises an output electrode connected to a second dopant region of the second conductivity type disposed near the top surface of said epitaxial layer at a lateral distance away from the first dopant region forming a second vertical PN junction with the epitaxial layer;
• and
• an insulated conductive region functioning as a resistor disposed on top of the epitaxial layer electrically connected in series between said input electrode and said output electrode.