Semiconductor light-emitting element manufacturing method, lamp, electronic equipment, and mechanical apparatus
AssigneeToyoda Gosei Co., Ltd.
InventorHiromitsu Sakai
Life of this patent
Estimating the term…
Abstract
A semiconductor light-emitting element manufacturing method including: a first step in which a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical vapor deposition apparatus; and a second step in which a regrowth layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated onto the aforementioned first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus.
Claims7
A semiconductor light-emitting element manufacturing method comprising:
- a first step in which a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical vapor deposition apparatus;
- and a second step in which a regrowth layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated onto said first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus, wherein the regrowth layer is a regrowth layer of the first n-type semiconductor layer laminated in the first step, said first n-type semiconductor layer and regrowth layer are n-contact layers, and said second n-type semiconductor layer is an n-clad layer.
A semiconductor light-emitting element manufacturing method comprising:
- a first step in which a first n-type semiconductor layer is laminated on a substrate in a first organometallic chemical vapor deposition apparatus;
- and a second step in which a regrowth layer, a second n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are sequentially laminated on said first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus;
- wherein said light-emitting layer is grown at a pressure of 500 mbar-1013 mbar in a deposition chamber of said second organometallic chemical vapor deposition apparatus in said second step.
Dependencies are inferred from the claim text.