Semiconductor device

A semiconductor device comprising:

• a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than a band gap of silicon;
• a first layer selectively disposed on a surface of the first semiconductor region and forming a first junction with the first semiconductor region;
• a second layer selectively disposed on the surface of the first semiconductor region and forming a second junction with the first semiconductor region;
• a first diode formed by a region that includes the first junction;
• a second diode formed by a region that includes the second junction;
• an electrode film is formed over the first layer and the second layer, the electrode film is electrically connected to the first diode and the second diode;
• and
• a fourth semiconductor region of a second conductivity type and disposed in a surface of the first semiconductor region, between the first junction and the second junction, contacting the first junction and the second junction, wherein
• a recess and an elevated portion that protrudes more than a bottom aspect of the recess are disposed on the surface of the first semiconductor region,
• the first junction and the second junction are formed at different depths from the surface of the first semiconductor region, and
• a built-in potential of the second diode is lower than a built-in potential of the first diode.