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US 8,896,083 B2Granted
Depletion-mode field-effect transistor-based phototransitor
AssigneeBoard of Regents, The University of Texas System
InventorsYeul Na, Krishna C. Saraswat
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Abstract
A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.
Claims16
A phototransistor comprising:
- a p-type substrate;
- an n-type source and an n-type drain formed within said p-type substrate;
- an n-type channel, connected between said n-type source and n-type drain, is formed within said p-type substrate;
- and
- a gate formed above said p-type substrate such that a current, in response to an incident light at said n-type source or said n-type drain is transported through an accumulation layer formed within said one n-type only channel.
2 more elements
A phototransistor comprising:
- an n-type substrate;
- a p-type source and a p-type drain formed within said n-type substrate;
- a p-type channel, connected between said p-type source and p-type drain, is formed within said n-type substrate;
- and
- a gate formed above said n-type substrate such that a current, in response to an incident light at said p-type source or said p-type drain is transported through an accumulation layer formed within said one p-type only channel.
2 more elements
Dependencies are inferred from the claim text.