Photoelectric conversion element, photoelectric conversion system, and method for production of photoelectric conversion element

A photoelectric conversion element comprising:

• an n-side electrode formed on a side at which light is incident;
• a GaN-based n-type semiconductor layer formed below the n-side electrode;
• a first photoelectric conversion layer formed below the n-type semiconductor layer and having a composition denoted as Inx1Gay1AlZ1N (0<x1≦1, 0≦y1<1, 0≦z1<1 and x1+y1+z1≦1);
• a second photoelectric conversion layer formed below the first photoelectric conversion layer and having a composition denoted as Inx2Gay2AlZ2N (0<x2≦1, 0≦y2<1, 0≦z2<1 and x2+y2+z2≦1) wherein x1<x2;
• a GaN-based p-type semiconductor layer formed below the second photoelectric conversion layer;
• and
• a p-side electrode formed below the p-type semiconductor layer.