Semiconductor radiation detector with thin film platinum alloyed electrode
AssigneeEv Products, Inc.
InventorsGary L. Smith, Csaba Szeles
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Abstract
A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.
Claims16
A semiconductor radiation detector comprising:
- a body of compound semiconducting material, said compound conducting material comprising a compound of cadmium, zinc, and telluride (CZT);
- and
- an electrode disposed on at least one surface of the body, said electrode comprising a first layer of an alloy of a first element and a second element, wherein said first element is platinum and said second element is selected from the group consisting of chromium, cobalt, gallium, germanium, indium, molybdenum, tantalum, vanadium, zirconium, manganese, iron, and magnesium, and wherein the electrode has a Vickers hardness of at least as great as 100.
Dependencies are inferred from the claim text.