US 8,896,067 B2Granted

Method of forming finFET of variable channel width

AssigneeInternational Business Machines Corporation

InventorsMarc Adam Bergendahl, David Vaclav Horak, Shom Ponoth, Chih-Chao Yang, Charles William Koburger, III

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Abstract

Embodiments of present invention provide a method of forming a first and a second group of fins on a substrate; covering a top first portion of the first and second groups of fins with a first dielectric material; covering a bottom second portion of the first and second groups of fins with a second dielectric material, the bottom second portion of the first group and the second group of fins having a same height; exposing a middle third portion of the first and second groups of fins to an oxidizing environment to create an oxide section that separates the top first portion from the bottom second portion of the first and second groups of fins; and forming one or more fin-type field-effect-transistors (FinFETs) using the top first portion of the first and second groups of fins as fins under gates of the one or more FinFETs.

Claims13

Dependent claims

A method comprising:

forming a first and a second group of fins on a substrate;
covering a top first portion of said first and second groups of fins with a first dielectric material by forming spacers of said first dielectric material directly next to sidewalls of said top first portion of said first and second groups of fins;
covering a bottom second portion of said first and second groups of fins with a second dielectric material, said second dielectric material being uniformly recessed to cause said bottom second portion of said first group of fins having a same height as said bottom second portion of said second group of fins;
exposing a middle third portion of said first and second groups of fins to an oxidizing environment to create an oxide section that separates said top first portion from said bottom second portion of said first and second groups of fins;
and
forming one or more fin-type field-effect-transistors (FinFETs) using said top first portion of said first and second groups of fins as fins under gates of said one or more FinFETs.

3 more elements

A method comprising:

forming a set of fins on a substrate, said set of fins having a top first portion, a bottom second portion, and a middle third portion directly underneath said top first portion and directly above said bottom second portion;
oxidizing said middle third portion to create an oxide section in each of said set of fins, said oxide section comprising a first group thereof, having a first bottom and a first height and corresponding to a first group of said set of fins, and a second group thereof, having a second bottom and a second height and corresponding to a second group of said set of fins, said first bottom having a same height as said second bottom and said first height being higher than said second height;
and
applying said top first portion of said set of fins in forming one or more fin-type field-effect-transistors (FinFETs),
wherein oxidizing said middle third portion comprises:
covering said top first portion by forming spacers of a first dielectric material directly next to sidewalls of said set of fins;
recessing a second dielectric material surrounding said set of fins to expose said middle third portion of said set of fins;
and
subjecting said exposed middle third portion to an oxidizing environment.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/736,111Filed 8 Jan 2013
Published: US 2014/0191323 A110 Jul 2014
Granted: 25 Nov 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 84/834
Of only insulated-gate FETs [IGFET]: comprising FinFETs
H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]
H10D 84/0158
The components including insulated gates, e.g. IGFETs: the components including FinFETs
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe