US 8,896,062 B2 · Semiconductor device and method for forming the same

Abstract

The invention provides a semiconductor device, including: a semiconductor base, on an insulation layer; source/drain regions abutting opposite first sides of the semiconductor base; and gates at opposite second sides of the semiconductor base, wherein the semiconductor base includes a cavity, and the insulation layer is exposed by the cavity. The invention also provides a method for forming a semiconductor device, including: forming a semiconductor bottom on an insulation layer; forming source/drain regions, the source/drain regions abutting opposite first sides of the semiconductor bottom; forming gates on opposite second sides of the semiconductor bottom; and removing a part of the semiconductor bottom to form a cavity in the semiconductor bottom, the cavity exposing the insulation layer. With the technical solutions provided by the invention, short-channel effects can be alleviated, and the resistance of the source/drain regions and parasitic capacitance can be reduced.

Claims23

Dependent claims

A semiconductor device, comprising:

a semiconductor base on an insulation layer, wherein the semiconductor base includes opposite first sides and opposite second sides, wherein the opposite first sides and opposite second sides are located at periphery of the semiconductor base and the semiconductor base is surrounded by the opposite first sides and opposite second sides;
a source region abutting one side of the opposite first sides and located outside the semiconductor base;
a drain region abutting the other side of the opposite first sides and located outside the semiconductor base;
a first gate at one side of the opposite second sides;
and
a second gate at the other side of the opposite second sides of the semiconductor base,
wherein a cavity is located in the semiconductor base, wherein the cavity is filled with an insulation material, the insulation layer is directly contacted with the insulation material and the insulation material is surrounded by the semiconductor base on at least four vertical sides.

4 more elements

A method for forming a semiconductor device, comprising:

forming a semiconductor base on an insulation layer, wherein the semiconductor base includes opposite first sides and opposite second sides, wherein the opposite first sides and opposite second sides are located at periphery of the semiconductor base and the semiconductor base is surrounded by the opposite first sides and opposite second sides;
forming a source region and a drain region, the source region abutting one side of the opposite first sides and located outside the semiconductor base and the drain region abutting the other side of the opposite first sides and located outside the semiconductor base;
forming a first gate and a second gate, wherein the first gate is at one side of opposite second sides, and the second gate is at the other side of the opposite second sides;
and
removing a part of the semiconductor base to form a cavity in the semiconductor base, wherein the cavity exposes the insulation layer;
wherein, the method further comprises:
filling the cavity with an insulation material;
wherein the insulation material is surrounded by the semiconductor base on at least four vertical sides.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for forming the same

Life of this patent

Semiconductor device and method for forming the same

Life of this patent

Abstract

Claims23